cat808 ? 2006 catalyst semiconductor, inc. 1 doc. no. 3024 rev. a characteristics subject to change without notice gnd 2 3 1 out v dd nc gnd 2 3 1 nc 5 4 out v dd low-power precision voltage detector features ? ultra low current consumption 2.4a ? accurate voltage detection threshold ? fine voltage detection threshold resolution ? active low open drain output ? available in 5-pin tsot- 23 and 3-pin sot- 89 rohs compliant packages ? industrial temperature range -40c to +85c applications ? battery-powered systems ? power supply monitoring ? handheld and portable equipment ? processor supervisor reset description the cat808 is a high-precision voltage detector designed for monitoring single cell and multi-cell batteries. voltage detection thresholds bet ween 2.0v and 3.2v are provided with 0.1v resolution and 3.0% accuracy. the cat808 open-drain output is active low until the v dd voltage exceeds the detection threshold. a low hysteresis is built into the device to minimize output ?chatter?, while v dd passes through the detection threshold, and the output transitions high. after the cat808 asserts the output high condition, it continues to monitor v dd until it drops below the detection threshold, when the output goes low until v dd once again exceeds the detection threshold. for ordering information details, see page 7. pin configuration typical application sot-89 5-lead thin sot-23 note: the value of the pull-up resistor is not critical out shdn gnd in dc-dc converter out v dd gnd battery voltage cat808 10k ?
cat808 doc. no. 3024 rev. a 2 ? 2006 catalyst semiconductor, inc. characteristics subject to change without notice absolute maximum ratings (1) parameters ratings units temperature under bias -55 to +125 oc storage temperature -65 to +150 oc voltage on any pin with respect to gnd (2)(3) -2.0 to v dd + 2.0 v v dd with respect to gnd -2.0 to 7.0 v lead soldering temperature (10 seconds) +300 oc tsot-23-5 250 mw power dissipation sot-89 500 mw recommended operating conditions parameters ratings units v dd +1.2 to +6.0 v operating temperature range -40 to +85 oc dc electrical characteristics t a = -40oc to +85oc, v dd = 1.2v to 6.0v symbol parameter conditions min typ. max units v det detection voltage, 27 t a = -40oc to +85oc 2.62 2.7 2.78 v det detection voltage, 32 t a = -40oc to +85oc 3.12 3.2 3.28 v v dd = 4.0v - 2.4 5 v dd = 5.0v - 3.5 7 i dd current consumption v dd = 6.0v - 5 10 a v dd =1.2v 0.6 1.4 - i out output sinkcurrent v ds = 0.5v v dd =2.4v 2.9 5 - ma i leak output leakage current v ds = 5.0v, v dd = 5.0v - - 1 a t phl/lh response time ? - - 60 s - v det t a -v det detection voltage temperature coefficient (4) t a = -40oc to +85oc - 10 100 ppm/oc notes: (1) stresses above those listed under ?absolut e maximum ratings? may cause permanent dam age to the device. these are stress rat ings only and functional operation of the devices at these or any other conditions outside of those listed in the operational sectio ns of this specification is not implied. exposure to any absolute maximum rating for extended periods may affect device performance and reliability. (2) the minimum dc input voltage is -0.5v. during transitions , inputs may undershoot to -2.0v for periods of less than 20ns. m aximum dc voltage on output pins is v cc +0.5v, which may overshoot to v cc +2.0v for periods of less than 20ns. (3) latch-up protection is provided for stre sses up to 100ma on all pins from -1v to v cc +1v. (4) the temperature change ratio in the detection voltage [ ppm/c] is calculated by using the following equation: ] c /o ppm [ 000 , 000 , 1 v - t v det a det ? ?
cat808 ? 2006 catalyst semiconductor, inc. 3 doc. no. 3024 rev. a characteristics subject to change without notice operation ? voltage detector the cat808 has an active low output that asserts (pulls low) when the supply voltage drops below the detection threshold voltage (v det ). the open-drain output requires an external pull-up resistor between the output pin and the supply voltage (as shown in the typical application diagram). on power-up, out is held active low until the supply voltage (v dd ) rises above v det . while v dd is above v det , out stays high until v dd drops below v det , then out once again goes low. block diagram timing diagram * voltage of v dd below 1 volt will not be able to maintain low output. pin functions pin function v dd voltage input and power supply gnd ground pin out active low open drain output nc no connect, the pin is electrically open voltage reference out v dd t plh t phl v det(min) v det(min) v det(max) v det v det(max) v det out slews with v dd gnd v oh v dd * out
cat808 doc. no. 3024 rev. a 4 ? 2006 catalyst semiconductor, inc. characteristics subject to change without notice 0.00 2.00 4.00 6.00 8.00 10.00 1.00 1.50 2.00 2.50 v dd (v) i out (ma) typical electrical oper ating characteristics typical values at t a = 25 c. v dd supply current vs. v dd supply voltage v det detection voltage vs. temperature response time vs. load capacitance i out transistor output current vs. v dd supply voltage +25oc +90oc -40oc 0 1 2 3 4 5 23456 supply voltage (v) supply current ( a) 2.695 2.7 2.705 2.71 -40 -5 30 65 100 temperature (oc) v det (v) 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 load capacitance [nf] response time [ms] 0.001 0.01 0.1 1 10 100 t plh t phl
cat808 ? 2006 catalyst semiconductor, inc. 5 doc. no. 3024 rev. a characteristics subject to change without notice package information 5-lead tsot-23 package notes: (1) all dimensions are in millimeters. (2) complies with jedec specification mo-193. symbol min nom max a ? ? 1.00 a1 0.01 0.05 0.10 a2 0.80 0.87 0.90 b 0.30 ? 0.45 c 0.12 0.15 0.20 d 2.90bsc e 2.80bsc e1 1.60bsc e 0.95bsc e1 1.90bsc l 0.30 0.40 0.50 l1 0.60ref l2 0.25bsc q 0o 8o a2 a a1 d e b e e1 e1 e e1 l2 gauge plane l l1 c
cat808 doc. no. 3024 rev. a 6 ? 2006 catalyst semiconductor, inc. characteristics subject to change without notice 3-lead sot-89 package notes: (1) all dimensions are in millimeters. (2) lead frame material: copper. symbol min nom max a 1.40 1.50 1.60 a1 0.30 0.40 0.50 l 0.80 ? 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0.38 0.40 0.43 d 4.40 4.50 4.60 d1 1.40 1.60 1.75 h 3.94 ? 4.25 e 2.40 2.50 2.60 e1 2.90 3.00 3.10 e 1.45 1.50 1.55 h e l a a1 c e b b b1 e1 d1 d
cat808 ? 2006 catalyst semiconductor, inc. 7 doc. no. 3024 rev. a characteristics subject to change without notice example of ordering information temperature range i = industrial (-40c to 85c) prefix device # suffix product number 808n package tb: tsot-23-5 tf: sot-89 optional company id lead finish g: nipdau blank: matte-tin voltage detection level -20: 2.0v -32: 3.2v 808n tb i -27 cat tape & reel t: ta p e & r e e l 1: 1000 reel 3: 3000 reel notes: (1) all packages are rohs-comp liant (lead-free, halogen-free). (2) the standard finish is nipdau. (3) the device used in the above example is a cat808ntbi-27-gt3 (t sot-23-5, industrial temperature, 2.7v detection level, nipda u, tape & reel). (4) for additional detection voltage, package and temperature options, pleas e contact your nearest catalyst semiconductor sales office. top marking part number package detection voltage top marking cat808ntbi-27-g tsot-23-5 2.70 mvym cat808ntbi-32-g tsot-23-5 3.20 mvym cat808ntfi-27 sot-89 2.70 aaxxx cat808ntfi-32 sot-89 3.20 aaxxx notes: (1) ym ? year and month code. (2) xxx ? assembly location code and la st 2 digits of assembly lot code. (3) sot-89 is offered in matte-tin only.
revision history date rev. reason 11/07/06 a initial issue copyrights, trademarks and patents trademarks and register ed trademarks of catalyst semiconductor include each of the following: beyond memory?, dpp?, ezdim?, minipot?, and quad-mode? catalyst semiconductor has been issued u. s. and foreign patents and has patent applicat ions pending that protect its products. catalyst semiconductor makes no warranty, representation or gu arantee, express or implied, regarding the suitability of its products for any particular purpose, nor that the use of its pro ducts will not infringe its intellectual property rights or the rights of third parties with respect to an y particular use or application and specific ally disclaims any and all liability aris ing out of any such use or application, including but not li mited to, consequential or incidental damages. catalyst semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgica l implant into the body, or other applications intended to support or sustain life, or for any othe r application in which the failure of the catalyst semiconduct or product could create a situation where personal injury or death may occur. catalyst semiconductor reserves the right to make changes to or discontinue any product or se rvice described herein without not ice. products with data sheets labeled "advance information" or "preliminary" and other products described herein may not be in pr oduction or offered for sale. catalyst semiconductor advises customers to obtain the current version of the relev ant product informati on before placing order s. circuit diagrams illustrate typical semiconductor applications and may not be complete. catalyst semiconductor, inc. corporate headquarters 2975 stender way santa clara, ca 95054 phone: 408.542.1000 document no: 3024 fax: 408.542.1200 revision: a www.catsemi.com issue date: 11/07/06
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